Manufacturer Product Number:
SIS414DN-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIS414DN-T1-GE3-DG
Description:
MOSFET N-CH 30V 20A PPAK1212-8
Detailed Description:
N-Channel 30 V 20A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount PowerPAK® 1212-8
Inventory:
12786659
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SIS414DN-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
795 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.4W (Ta), 31W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS414
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIS414DNT1GE3
SIS414DN-T1-GE3DKR
SIS414DN-T1-GE3CT
SIS414DN-T1-GE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
RQ3E100MNTB1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
5261
DiGi PART NUMBER
RQ3E100MNTB1-DG
UNIT PRICE
0.40
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
RQ3E080BNTB
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
40431
DiGi PART NUMBER
RQ3E080BNTB-DG
UNIT PRICE
0.10
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
SISA88DN-T1-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
36506
DiGi PART NUMBER
SISA88DN-T1-GE3-DG
UNIT PRICE
0.14
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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