SIHU4N80AE-GE3
Manufacturer Product Number:

SIHU4N80AE-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHU4N80AE-GE3-DG

Description:

MOSFET N-CH 800V 4.3A IPAK
Detailed Description:
N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)

Inventory:

2995 Pcs New Original In Stock
12786674
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SIHU4N80AE-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
622 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251)
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Base Product Number
SIHU4

Datasheet & Documents

Datasheets
SIHU4N80AE-GE3

Additional Information

Other Names
2266-SIHU4N80AE-GE3
SIHU4N80AE-GE3-DG
742-SIHU4N80AE-GE3
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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