Manufacturer Product Number:
SIR812DP-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIR812DP-T1-GE3-DG
Description:
MOSFET N-CH 30V 60A PPAK SO-8
Detailed Description:
N-Channel 30 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Inventory:
12786676
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SIR812DP-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
335 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10240 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR812
Additional Information
Other Names
SIR812DP-T1-GE3DKR
SIR812DPT1GE3
SIR812DP-T1-GE3CT
SIR812DP-T1-GE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
RS1E350GNTB
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
2500
DiGi PART NUMBER
RS1E350GNTB-DG
UNIT PRICE
1.02
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
RS1E350BNTB
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
810
DiGi PART NUMBER
RS1E350BNTB-DG
UNIT PRICE
0.65
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
CSD17312Q5
MANUFACTURER
Texas Instruments
QUANTITY AVAILABLE
6167
DiGi PART NUMBER
CSD17312Q5-DG
UNIT PRICE
0.89
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
SIRA80DP-T1-RE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
15704
DiGi PART NUMBER
SIRA80DP-T1-RE3-DG
UNIT PRICE
0.59
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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