FQI4N80TU
Manufacturer Product Number:

FQI4N80TU

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FQI4N80TU-DG

Description:

MOSFET N-CH 800V 3.9A I2PAK
Detailed Description:
N-Channel 800 V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole TO-262 (I2PAK)

Inventory:

1550 Pcs New Original In Stock
12946768
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FQI4N80TU Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet & Documents

Datasheets
FQI4N80TU Datasheet

Additional Information

Other Names
FAIFSCFQI4N80TU
2156-FQI4N80TU
Standard Package
287

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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