Manufacturer Product Number:
IRF2805PBF
Product Overview
Manufacturer:
International Rectifier
DiGi Electronics Part Number:
IRF2805PBF-DG
Description:
IRF2805 - 12V-300V N-CHANNEL POW
Detailed Description:
N-Channel 55 V 75A (Tc) 330W (Tc) Through Hole TO-220AB
Inventory:
1042 Pcs New Original In Stock
12946770
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IRF2805PBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
HEXFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 104A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5110 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IRF2805PBF
IFEIRFIRF2805PBF
Standard Package
243
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
FQI5N60CTU
MOSFET N-CH 600V 4.5A I2PAK
FQP3P20
POWER FIELD-EFFECT TRANSISTOR, 2
FQA44N30
POWER FIELD-EFFECT TRANSISTOR, 4