FQI5N60CTU
Manufacturer Product Number:

FQI5N60CTU

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FQI5N60CTU-DG

Description:

MOSFET N-CH 600V 4.5A I2PAK
Detailed Description:
N-Channel 600 V 4.5A (Tc) 3.13W (Ta), 100W (Tc) Through Hole TO-262 (I2PAK)

Inventory:

34688 Pcs New Original In Stock
12946771
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FQI5N60CTU Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 100W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet & Documents

Additional Information

Other Names
2156-FQI5N60CTU
FAIFSCFQI5N60CTU
Standard Package
350

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
fairchild-semiconductor

FQP3P20

POWER FIELD-EFFECT TRANSISTOR, 2

fairchild-semiconductor

FQA44N30

POWER FIELD-EFFECT TRANSISTOR, 4

fairchild-semiconductor

FDP16AN08A0

MOSFET N-CH 75V 9A/58A TO220-3

fairchild-semiconductor

FDPF13N50FT

POWER FIELD-EFFECT TRANSISTOR, 1