SIHP35N60EF-GE3
Manufacturer Product Number:

SIHP35N60EF-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHP35N60EF-GE3-DG

Description:

MOSFET N-CH 600V 32A TO220AB
Detailed Description:
N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB

Inventory:

1000 Pcs New Original In Stock
12919102
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SIHP35N60EF-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
EF
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
134 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2568 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP35

Datasheet & Documents

Datasheets
SIHP35N60EF-GE3

Additional Information

Other Names
SIHP35N60EF-GE3DKR-DG
SIHP35N60EF-GE3DKRINACTIVE
SIHP35N60EF-GE3TR
SIHP35N60EF-GE3CT
SIHP35N60EF-GE3TR-DG
SIHP35N60EF-GE3TRINACTIVE
SIHP35N60EF-GE3DKR
SIHP35N60EF-GE3CT-DG
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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