Manufacturer Product Number:
SIHG35N60EF-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHG35N60EF-GE3-DG
Description:
MOSFET N-CH 600V 32A TO247AC
Detailed Description:
N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-247AC
Inventory:
12919103
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SIHG35N60EF-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
EF
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
134 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2568 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG35
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIHG35N60EF-GE3CTINACTIVE
SIHG35N60EF-GE3CT
SIHG35N60EF-GE3DKRINACTIVE
SIHG35N60EF-GE3TR
SIHG35N60EF-GE3TR-DG
SIHG35N60EF-GE3DKR
SIHG35N60EF-GE3DKR-DG
SIHG35N60EF-GE3CT-DG
Standard Package
25
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IXKH47N60C
MANUFACTURER
IXYS
QUANTITY AVAILABLE
141
DiGi PART NUMBER
IXKH47N60C-DG
UNIT PRICE
14.94
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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