Manufacturer Product Number:
SIE812DF-T1-E3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIE812DF-T1-E3-DG
Description:
MOSFET N-CH 40V 60A 10POLARPAK
Detailed Description:
N-Channel 40 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Inventory:
12918441
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SIE812DF-T1-E3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8300 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE812
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIE812DF-T1-E3TR
SIE812DF-T1-E3DKR
SIE812DF-T1-E3CT
SIE812DFT1E3
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
SIE812DF-T1-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
275
DiGi PART NUMBER
SIE812DF-T1-GE3-DG
UNIT PRICE
1.47
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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