SIE812DF-T1-GE3
Manufacturer Product Number:

SIE812DF-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIE812DF-T1-GE3-DG

Description:

MOSFET N-CH 40V 60A 10POLARPAK
Detailed Description:
N-Channel 40 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Inventory:

275 Pcs New Original In Stock
12917577
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIE812DF-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8300 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE812

Datasheet & Documents

Datasheets
SIE812DF-T1-GE3

Additional Information

Other Names
SIE812DF-T1-GE3-DG
SIE812DF-T1-GE3TR
SIE812DF-T1-GE3DKR
SIE812DF-T1-GE3CT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
vishay-siliconix

SQJ479EP-T1_GE3

MOSFET P-CH 80V 32A PPAK SO-8

vishay-siliconix

SI2321DS-T1-GE3

MOSFET P-CH 20V 2.9A SOT23-3

vishay-siliconix

SIHP6N40D-GE3

MOSFET N-CH 400V 6A TO220AB

vishay-siliconix

SI4378DY-T1-GE3

MOSFET N-CH 20V 19A 8SO