Manufacturer Product Number:
TPN11006PL,LQ
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TPN11006PL,LQ-DG
Description:
MOSFET N-CH 60V 26A 8TSON
Detailed Description:
N-Channel 60 V 26A (Tc) 610mW (Ta), 61W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Inventory:
7066 Pcs New Original In Stock
12920920
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TPN11006PL,LQ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSIX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1625 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
610mW (Ta), 61W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN
Base Product Number
TPN11006
Datasheet & Documents
Datasheets
Additional Information
Other Names
TPN11006PL,LQ(S
264-TPN11006PLLQCT
264-TPN11006PLLQTR
264-TPN11006PLLQDKR
Standard Package
3,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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