Manufacturer Product Number:
SIHU3N50DA-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHU3N50DA-GE3-DG
Description:
MOSFET N-CHANNEL 500V 3A IPAK
Detailed Description:
N-Channel 500 V 3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
Inventory:
12920922
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SIHU3N50DA-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
177 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251)
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Base Product Number
SIHU3
Datasheet & Documents
Datasheets
Additional Information
Standard Package
3,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SIR140DP-T1-RE3
MOSFET N-CH 25V 71.9A/100A PPAK
SIHP25N40D-E3
MOSFET N-CH 400V 25A TO220AB
SISA01DN-T1-GE3
MOSFET P-CH 30V 22.4A/60A PPAK
