Manufacturer Product Number:
R6027YNZ4C13
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R6027YNZ4C13-DG
Description:
NCH 600V 27A, TO-247G, POWER MOS
Detailed Description:
N-Channel 600 V 27A (Tc) 245W (Tc) Through Hole TO-247G
Inventory:
600 Pcs New Original In Stock
13238541
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
R6027YNZ4C13 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Rds On (Max) @ Id, Vgs
135mOhm @ 7A, 12V
Vgs(th) (Max) @ Id
6V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
245W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247G
Package / Case
TO-247-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-R6027YNZ4C13
Standard Package
30
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
DIGI Certification
Related Products
R6049YNXC7G
NCH 600V 22A, TO-220FM, POWER MO
R6049YNX3C16
NCH 600V 49A, TO-220AB, POWER MO
R6049YNZ4C13
NCH 600V 49A, TO-247G, POWER MOS