Manufacturer Product Number:
R6061YNXC7G
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R6061YNXC7G-DG
Description:
NCH 600V 26A, TO-220FM, POWER MO
Detailed Description:
N-Channel 600 V 26A (Tc) 100W (Tc) Through Hole TO-220FM
Inventory:
1000 Pcs New Original In Stock
13238773
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R6061YNXC7G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Rds On (Max) @ Id, Vgs
60mOhm @ 13A, 12V
Vgs(th) (Max) @ Id
6V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-R6061YNXC7G
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
DIGI Certification
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