IQD063N15NM5CGATMA1
Manufacturer Product Number:

IQD063N15NM5CGATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IQD063N15NM5CGATMA1-DG

Description:

TRENCH >=100V
Detailed Description:
N-Channel 150 V 14.1A (Ta), 148A (Tc) 2.5W (Ta), 278W (Tc) Surface Mount PG-TTFN-9-U02

Inventory:

12994049
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IQD063N15NM5CGATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™ 5
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
14.1A (Ta), 148A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
6.32mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4.6V @ 159µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TTFN-9-U02
Package / Case
9-PowerTDFN
Base Product Number
IQD063

Datasheet & Documents

Additional Information

Other Names
SP005588872
448-IQD063N15NM5CGATMA1TR
448-IQD063N15NM5CGATMA1CT
448-IQD063N15NM5CGATMA1DKR
Standard Package
5,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
DIGI Certification
Related Products
diodes

DMTH15H017LPSW-13

MOSFET BVDSS: 101V~250V POWERDI5

goford-semiconductor

G080P06T

MOSFET P-CH 60V 195A TO-220

onsemi

FDBL86066-F085AW

MOSFET N-CH 100V 185A 8HPSOF

infineon-technologies

IMT65R048M1HXUMA1

SILICON CARBIDE MOSFET