G080P06T
Manufacturer Product Number:

G080P06T

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

G080P06T-DG

Description:

MOSFET P-CH 60V 195A TO-220
Detailed Description:
P-Channel 195A (Tc) 294W (Tc) Through Hole TO-220

Inventory:

10000 Pcs New Original In Stock
12994061
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

G080P06T Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
TrenchFET®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
Standard
Power Dissipation (Max)
294W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

Datasheet & Documents

Datasheets

Additional Information

Other Names
4822-G080P06T
Standard Package
2,000

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
onsemi

FDBL86066-F085AW

MOSFET N-CH 100V 185A 8HPSOF

infineon-technologies

IMT65R048M1HXUMA1

SILICON CARBIDE MOSFET

icemos-technology

ICE15N73FP

Superjunction MOSFET

infineon-technologies

IQE065N10NM5CGSCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET