Manufacturer Product Number:
IPP65R660CFDAAKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPP65R660CFDAAKSA1-DG
Description:
MOSFET N-CH 650V 6A TO220-3
Detailed Description:
N-Channel 650 V 6A (Tc) 62.5W (Tc) Through Hole PG-TO220-3
Inventory:
12805071
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IPP65R660CFDAAKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
660mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
543 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP000875802
Standard Package
500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STP12NK80Z
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
707
DiGi PART NUMBER
STP12NK80Z-DG
UNIT PRICE
1.56
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
STP11N65M2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
1996
DiGi PART NUMBER
STP11N65M2-DG
UNIT PRICE
0.67
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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