STP11N65M2
Manufacturer Product Number:

STP11N65M2

Product Overview

Manufacturer:

STMicroelectronics

DiGi Electronics Part Number:

STP11N65M2-DG

Description:

MOSFET N-CH 650V 7A TO220
Detailed Description:
N-Channel 650 V 7A (Tc) 85W (Tc) Through Hole TO-220

Inventory:

1996 Pcs New Original In Stock
12878089
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STP11N65M2 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
MDmesh™ II Plus
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP11

Datasheet & Documents

Additional Information

Other Names
497-STP11N65M2
497-15039-5
497-15039-5-DG
-497-15039-5
Standard Package
2,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
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MANUFACTURER
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QUANTITY AVAILABLE
766
DiGi PART NUMBER
FCP850N80Z-DG
UNIT PRICE
1.13
SUBSTITUTE TYPE
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MANUFACTURER
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QUANTITY AVAILABLE
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DiGi PART NUMBER
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UNIT PRICE
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SUBSTITUTE TYPE
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