Manufacturer Product Number:
IPB95R450PFD7ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB95R450PFD7ATMA1-DG
Description:
MOSFET N-CH 950V 13.3A TO263-3
Detailed Description:
N-Channel 950 V 13.3A (Tc) 104W (Tc) Surface Mount PG-TO263-3-2
Inventory:
13001618
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IPB95R450PFD7ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
950 V
Current - Continuous Drain (Id) @ 25°C
13.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IPB95R450PFD7ATMA1TR
448-IPB95R450PFD7ATMA1CT
448-IPB95R450PFD7ATMA1DKR
SP005547014
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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