SISHA18ADN-T1-GE3
Manufacturer Product Number:

SISHA18ADN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SISHA18ADN-T1-GE3-DG

Description:

N-CHANNEL 30 V (D-S) MOSFET POWE
Detailed Description:
N-Channel 30 V 22A (Ta), 60A (Tc) 3.5W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8SH

Inventory:

12040 Pcs New Original In Stock
13001636
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SISHA18ADN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
1650 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 26.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-SISHA18ADN-T1-GE3DKR
742-SISHA18ADN-T1-GE3TR
742-SISHA18ADN-T1-GE3CT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
nexperia

PSMN2R1-30YLEX

PSMN2R1-30YLE/SOT669/LFPAK

diodes

DMN39M1LFVW-7

MOSFET BVDSS: 25V~30V POWERDI333

micro-commercial-components

MCP150N06A-BP

MOSFET N-CHANNEL MOSFET

icemos-technology

ICE11N70

Superjunction MOSFET