Manufacturer Product Number:
IPAN60R210PFD7SXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPAN60R210PFD7SXKSA1-DG
Description:
MOSFET N-CH 650V 16A TO220
Detailed Description:
N-Channel 650 V 16A (Tc) 25W (Tc) Through Hole PG-TO220-FP
Inventory:
781 Pcs New Original In Stock
12810876
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPAN60R210PFD7SXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™PFD7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1015 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPAN60
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP003235776
448-IPAN60R210PFD7SXKSA1
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPS60R1K0PFD7SAKMA1
MOSFET N-CH 650V 4.7A TO251-3
IMW65R107M1HXKSA1
MOSFET 650V NCH SIC TRENCH
IPAN60R125PFD7SXKSA1
MOSFET N-CH 650V 25A TO220
