Manufacturer Product Number:
IMW65R107M1HXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMW65R107M1HXKSA1-DG
Description:
MOSFET 650V NCH SIC TRENCH
Detailed Description:
N-Channel 650 V 20A (Tc) 75W (Tc) Through Hole PG-TO247-3-41
Inventory:
431 Pcs New Original In Stock
12810878
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IMW65R107M1HXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolSiC™
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
142mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
496 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Base Product Number
IMW65R107
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IMW65R107M1HXKSA1
SP005398436
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPAN60R125PFD7SXKSA1
MOSFET N-CH 650V 25A TO220
IPN60R1K5PFD7SATMA1
MOSFET N-CH 600V 3.6A SOT223
IPT60R040S7XTMA1
MOSFET N-CH 600V 13A 8HSOF
