GT045N10M
Manufacturer Product Number:

GT045N10M

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

GT045N10M-DG

Description:

N100V, 120A,RD<4.5M@10V,VTH2V~4V
Detailed Description:
N-Channel 100 V 120A (Tc) 180W (Tc) Surface Mount TO-263

Inventory:

694 Pcs New Original In Stock
13002762
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

GT045N10M Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
SGT
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4198 pF @ 50 V
FET Feature
Standard
Power Dissipation (Max)
180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Datasheets

Additional Information

Other Names
3141-GT045N10MTR
4822-GT045N10MTR
3141-GT045N10MCT
3141-GT045N10MDKR
Standard Package
800

Environmental & Export Classification

RoHS Status
RoHS Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
GT045N10M
MANUFACTURER
Goford Semiconductor
QUANTITY AVAILABLE
694
DiGi PART NUMBER
GT045N10M-DG
UNIT PRICE
0.74
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
Related Products
goford-semiconductor

G1K1P06HH

P-60V,-4.5A,RD(MAX)<110M@-10V,VT

diodes

DMN1019USNQ-7

MOSFET BVDSS: 8V~24V SC59 T&R 3K

vishay-siliconix

SQS182ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

diodes

DMN2710UFB-7B

MOSFET BVDSS: 8V~24V X1-DFN1006-