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Manufacturer Product Number:
IQE065N10NM5CGSCATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IQE065N10NM5CGSCATMA1-DG
Description:
OPTIMOS LOWVOLTAGE POWER MOSFET
Detailed Description:
N-Channel 100 V 13A (Ta), 85A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-WHTFN-9-1
Inventory:
RFQ Online
12994093
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IQE065N10NM5CGSCATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™ 5
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.8V @ 48µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-WHTFN-9-1
Package / Case
9-PowerWDFN
Datasheet & Documents
Datasheets
IQE065N10NM5CGSC
Additional Information
Other Names
448-IQE065N10NM5CGSCATMA1DKR
448-IQE065N10NM5CGSCATMA1CT
448-IQE065N10NM5CGSCATMA1TR
SP005559084
Standard Package
6,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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