Manufacturer Product Number:
DMWS120H100SM4
Product Overview
Manufacturer:
Diodes Incorporated
DiGi Electronics Part Number:
DMWS120H100SM4-DG
Description:
SIC MOSFET BVDSS: >1000V TO247-4
Detailed Description:
N-Channel 1200 V 37.2A (Tc) 208W (Tc) Through Hole TO-247-4
Inventory:
2 Pcs New Original In Stock
13001177
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DMWS120H100SM4 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Diodes Incorporated
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Vgs (Max)
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1516 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Base Product Number
DMWS120
Datasheet & Documents
Datasheets
Additional Information
Other Names
31-DMWS120H100SM4
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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