Manufacturer Product Number:
IRFP4668PBFXKMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRFP4668PBFXKMA1-DG
Description:
TRENCH >=100V PG-TO247-3
Detailed Description:
N-Channel 200 V 130A (Tc) 520W Through Hole TO-247AC
Inventory:
396 Pcs New Original In Stock
13001213
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IRFP4668PBFXKMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
HEXFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
241 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10720 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
520W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP005732696
448-IRFP4668PBFXKMA1
Standard Package
25
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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