Manufacturer Product Number:
DMG4N65CTI
Product Overview
Manufacturer:
Diodes Incorporated
DiGi Electronics Part Number:
DMG4N65CTI-DG
Description:
MOSFET N-CH 650V 4A ITO220AB
Detailed Description:
N-Channel 650 V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB
Inventory:
12882720
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DMG4N65CTI Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Diodes Incorporated
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
8.35W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
DMG4
Additional Information
Other Names
DMG4N65CTIDI
DMG4N65CTIDDI
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TSM4ND65CI
MANUFACTURER
Taiwan Semiconductor Corporation
QUANTITY AVAILABLE
1845
DiGi PART NUMBER
TSM4ND65CI-DG
UNIT PRICE
1.04
SUBSTITUTE TYPE
Direct
DIGI Certification
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