Manufacturer Product Number:
TSM4ND65CI
Product Overview
Manufacturer:
Taiwan Semiconductor Corporation
DiGi Electronics Part Number:
TSM4ND65CI-DG
Description:
MOSFET N-CH 650V 4A ITO220
Detailed Description:
N-Channel 650 V 4A (Tc) 41.6W (Tc) Through Hole ITO-220
Inventory:
1845 Pcs New Original In Stock
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TSM4ND65CI Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
596 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
41.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
TSM4
Datasheet & Documents
Datasheets
Additional Information
Other Names
1801-TSM4ND65CI
TSM4ND65CI-DG
TSM4ND65CI RLG
TSM4ND65CI C0G
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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