SI8469DB-T2-E1

Manufacturer Product Number:

SI8469DB-T2-E1

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI8469DB-T2-E1-DG

Description:

MOSFET P-CH 8V 4.6A 4MICROFOOT

Detailed Description:

P-Channel 8 V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Inventory:

RFQ Online

13062100

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SI8469DB-T2-E1 Technical Specifications

Category

FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer

Vishay

Packaging

-

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8 V

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

64mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17 nC @ 4.5 V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

900 pF @ 4 V

FET Feature

-

Power Dissipation (Max)

780mW (Ta), 1.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-UFBGA

Base Product Number

SI8469

Datasheet & Documents

Datasheets

Additional Information

Other Names

SI8469DB-T2-E1-ND

SI8469DB-T2-E1CT

SI8469DB-T2-E1TR

SI8469DB-T2-E1DKR

Standard Package

3,000

Environmental & Export Classification

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

DIGI Certification

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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