SQS481ENW-T1_GE3
Manufacturer Product Number:

SQS481ENW-T1_GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SQS481ENW-T1_GE3-DG

Description:

MOSFET P-CH 150V 4.7A PPAK1212-8
Detailed Description:
P-Channel 150 V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

Inventory:

10641 Pcs New Original In Stock
12918217
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SQS481ENW-T1_GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
385 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SQS481

Datasheet & Documents

Additional Information

Other Names
SQS481ENW-T1_GE3DKR
SQS481ENW-T1_GE3CT
SQS481ENW-T1_GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
vishay-siliconix

SI5406DC-T1-E3

MOSFET N-CH 12V 6.9A 1206-8

vishay-siliconix

SIHP12N65E-GE3

MOSFET N-CH 650V 12A TO220AB

vishay-siliconix

SI4632DY-T1-GE3

MOSFET N-CH 25V 40A 8SO

vishay-siliconix

SI5403DC-T1-GE3

MOSFET P-CH 30V 6A 1206-8