Manufacturer Product Number:
SQM200N04-1M7L_GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SQM200N04-1M7L_GE3-DG
Description:
MOSFET N-CH 40V 200A TO263-7
Detailed Description:
N-Channel 40 V 200A (Tc) 375W (Tc) Surface Mount TO-263-7
Inventory:
12786121
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SQM200N04-1M7L_GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
291 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11168 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
SQM200
Datasheet & Documents
Datasheets
Additional Information
Other Names
SQM200N04-1M7L_GE3-DG
SQM200N04-1M7L_GE3CT
SQM200N04-1M7L_GE3TR
SQM200N04-1M7L_GE3DKR
SQM200N04-1M7L-GE3
SQM200N04-1M7L-GE3-DG
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPB160N04S4LH1ATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
1895
DiGi PART NUMBER
IPB160N04S4LH1ATMA1-DG
UNIT PRICE
1.40
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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