SQJQ112E-T1_GE3
Manufacturer Product Number:

SQJQ112E-T1_GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SQJQ112E-T1_GE3-DG

Description:

AUTOMOTIVE N-CHANNEL 100 V (D-S)
Detailed Description:
N-Channel 100 V 296A (Tc) 600W (Tc) Surface Mount PowerPAK® 8 x 8

Inventory:

12965597
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SQJQ112E-T1_GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
296A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.53mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
272 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15945 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
600W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 8 x 8
Package / Case
PowerPAK® 8 x 8

Datasheet & Documents

Additional Information

Other Names
742-SQJQ112E-T1_GE3TR
742-SQJQ112E-T1_GE3DKR
Standard Package
2,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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