Manufacturer Product Number:
SISA12BDN-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SISA12BDN-T1-GE3-DG
Description:
N-CHANNEL 30-V (D-S) MOSFET POWE
Detailed Description:
N-Channel 30 V 24A (Ta), 87A (Tc) 4W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Inventory:
6024 Pcs New Original In Stock
12997543
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SISA12BDN-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
24A (Ta), 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
1470 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
4W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-SISA12BDN-T1-GE3DKR
742-SISA12BDN-T1-GE3CT
742-SISA12BDN-T1-GE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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