SIS932EDN-T1-GE3
Manufacturer Product Number:

SIS932EDN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIS932EDN-T1-GE3-DG

Description:

MOSFET 2N-CH 30V 6A PPAK 1212
Detailed Description:
Mosfet Array 30V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual

Inventory:

5843 Pcs New Original In Stock
12786793
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SIS932EDN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 15V
Power - Max
2.6W (Ta), 23W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
Base Product Number
SIS932

Datasheet & Documents

Datasheets
SIS932EDN-T1-GE3

Additional Information

Other Names
SIS932EDN-T1-GE3TR
SIS932EDN-T1-GE3CT
SIS932EDN-T1-GE3DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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