SIRS700DP-T1-GE3
Manufacturer Product Number:

SIRS700DP-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIRS700DP-T1-GE3-DG

Description:

N-CHANNEL 100 V (D-S) MOSFET POW
Detailed Description:
N-Channel 100 V 30A (Ta), 127A (Tc) 7.4W (Ta),132W (Tc) Surface Mount PowerPAK® SO-8

Inventory:

4359 Pcs New Original In Stock
12974811
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIRS700DP-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
7.4W (Ta),132W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8

Datasheet & Documents

Additional Information

Other Names
742-SIRS700DP-T1-GE3TR
742-SIRS700DP-T1-GE3DKR
742-SIRS700DP-T1-GE3CT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
goford-semiconductor

G1003A

N100V,RD(MAX)<210M@10V,RD(MAX)<2

taiwan-semiconductor

TSM500N15CS RLG

150V, 11A, SINGLE N-CHANNEL POWE

goford-semiconductor

G1003A

MOSFET N-CH ESD 100V 1.7A SOT-23

panjit

PJQ5411_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M