Manufacturer Product Number:
SIR802DP-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIR802DP-T1-GE3-DG
Description:
MOSFET N-CH 20V 30A PPAK SO-8
Detailed Description:
N-Channel 20 V 30A (Tc) 4.6W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8
Inventory:
12919687
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SIR802DP-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1785 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
4.6W (Ta), 27.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR802
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIR802DP-T1-GE3CT
SIR802DP-T1-GE3DKR
SIR802DPT1GE3
SIR802DP-T1-GE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
BSC046N02KSGAUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
19920
DiGi PART NUMBER
BSC046N02KSGAUMA1-DG
UNIT PRICE
0.55
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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