Manufacturer Product Number:
SIR662DP-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIR662DP-T1-GE3-DG
Description:
MOSFET N-CH 60V 60A PPAK SO-8
Detailed Description:
N-Channel 60 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Inventory:
12920197
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SIR662DP-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4365 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR662
Datasheet & Documents
Product Drawings
Datasheets
Additional Information
Other Names
SIR662DPDKR
SIR662DPDKR-DG
SIR662DP-T1-GE3CT
SIR662DPT1GE3
SIR662DPCT
SIR662DP
SIR662DPTR
SIR662DP-T1-GE3DKR
SIR662DP-T1-GE3TR
SIR662DPTR-DG
SIR662DPCT-DG
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
RS3L045GNGZETB
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
1173
DiGi PART NUMBER
RS3L045GNGZETB-DG
UNIT PRICE
0.25
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
TPH7R006PL,L1Q
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
54092
DiGi PART NUMBER
TPH7R006PL,L1Q-DG
UNIT PRICE
0.25
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
RS1L145GNTB
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
1003
DiGi PART NUMBER
RS1L145GNTB-DG
UNIT PRICE
0.81
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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