Manufacturer Product Number:
SIHB12N60E-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHB12N60E-GE3-DG
Description:
MOSFET N-CH 600V 12A D2PAK
Detailed Description:
N-Channel 600 V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D2PAK)
Inventory:
12787407
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SIHB12N60E-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB12
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIHB12N60EGE3
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STB13NM60N
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
1000
DiGi PART NUMBER
STB13NM60N-DG
UNIT PRICE
2.21
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
STB13N60M2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
2210
DiGi PART NUMBER
STB13N60M2-DG
UNIT PRICE
0.86
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
SPB11N60C3ATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
2703
DiGi PART NUMBER
SPB11N60C3ATMA1-DG
UNIT PRICE
1.53
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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