SIDR626LDP-T1-RE3
Manufacturer Product Number:

SIDR626LDP-T1-RE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIDR626LDP-T1-RE3-DG

Description:

MOSFET N-CH 60V 45.6A/2.4A PPAK
Detailed Description:
N-Channel 60 V 45.6A (Ta), 2.4A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Inventory:

17508 Pcs New Original In Stock
12945161
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SIDR626LDP-T1-RE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
45.6A (Ta), 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5900 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Base Product Number
SIDR626

Datasheet & Documents

Datasheets
SIDR626LDP-T1-RE3

Additional Information

Other Names
742-SIDR626LDP-T1-RE3TR
742-SIDR626LDP-T1-RE3CT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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