Manufacturer Product Number:
SIDR402EP-T1-RE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIDR402EP-T1-RE3-DG
Description:
N-CHANNEL 40 V (D-S) 175C MOSFET
Detailed Description:
N-Channel 40 V 65.2A (Ta), 291A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC
Inventory:
12997404
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SIDR402EP-T1-RE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
65.2A (Ta), 291A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
9100 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
7.5W (Ta), 150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-SIDR402EP-T1-RE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SIHK055N60E-T1-GE3
E SERIES POWER MOSFET POWERPAK 1
FBG04N30BC
GAN FET HEMT 40V30A COTS 4FSMD-B
25P06
MOSFET P-CH 60V 25A TO-252
