SIA477EDJT-T1-GE3
Manufacturer Product Number:

SIA477EDJT-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIA477EDJT-T1-GE3-DG

Description:

MOSFET P-CH 12V 12A PPAK SC70-6
Detailed Description:
P-Channel 12 V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Inventory:

10917 Pcs New Original In Stock
12913992
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIA477EDJT-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen III
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3050 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
19W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6 Single
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA477

Datasheet & Documents

Datasheets
SIA477EDJT-T1-GE3

Additional Information

Other Names
SIA477EDJT-T1-GE3DKR
SIA477EDJT-T1-GE3CT
SIA477EDJT-T1-GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
vishay-siliconix

IRFR420ATRPBF

MOSFET N-CH 500V 3.3A DPAK

vishay-siliconix

IRFP350LC

MOSFET N-CH 400V 16A TO247-3

vishay-siliconix

IRL630S

MOSFET N-CH 200V 9A D2PAK

littelfuse

IXFA230N075T2

MOSFET N-CH 75V 230A TO263