SI7898DP-T1-GE3
Manufacturer Product Number:

SI7898DP-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI7898DP-T1-GE3-DG

Description:

MOSFET N-CH 150V 3A PPAK SO-8
Detailed Description:
N-Channel 150 V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Inventory:

14108 Pcs New Original In Stock
12916286
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SI7898DP-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SI7898

Datasheet & Documents

Datasheets
SI7898DP-T1-GE3

Additional Information

Other Names
SI7898DPT1GE3
SI7898DP-T1-GE3TR
SI7898DP-T1-GE3DKR
SI7898DP-T1-GE3CT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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