SI7102DN-T1-E3
Manufacturer Product Number:

SI7102DN-T1-E3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI7102DN-T1-E3-DG

Description:

MOSFET N-CH 12V 35A PPAK 1212-8
Detailed Description:
N-Channel 12 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Inventory:

12964352
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SI7102DN-T1-E3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3720 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7102

Datasheet & Documents

Datasheets

Additional Information

Other Names
SI7102DN-T1-E3-DG
SI7102DN-T1-E3CT
SI7102DN-T1-E3DKR
SI7102DN-T1-E3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
SISH410DN-T1-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
2190
DiGi PART NUMBER
SISH410DN-T1-GE3-DG
UNIT PRICE
0.37
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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