SI4166DY-T1-GE3
Manufacturer Product Number:

SI4166DY-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI4166DY-T1-GE3-DG

Description:

MOSFET N-CH 30V 30.5A 8SO
Detailed Description:
N-Channel 30 V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

Inventory:

5435 Pcs New Original In Stock
12918157
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SI4166DY-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2730 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 6.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4166

Datasheet & Documents

Datasheets
SI4166DY-T1-GE3

Additional Information

Other Names
SI4166DYT1GE3
SI4166DY-T1-GE3DKR
SI4166DY-T1-GE3CT
SI4166DY-T1-GE3TR
SI4166DY-T1-GE3-DG
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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