SI4100DY-T1-GE3
Manufacturer Product Number:

SI4100DY-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI4100DY-T1-GE3-DG

Description:

MOSFET N-CH 100V 6.8A 8SO
Detailed Description:
N-Channel 100 V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC

Inventory:

7295 Pcs New Original In Stock
12916659
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SI4100DY-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
63mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4100

Datasheet & Documents

Datasheets
SI4100DY-T1-GE3

Additional Information

Other Names
SI4100DYT1GE3
SI4100DY-T1-GE3DKR
SI4100DY-T1-GE3-DG
SI4100DY-T1-GE3CT
SI4100DY-T1-GE3TR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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