SI3451DV-T1-GE3
Manufacturer Product Number:

SI3451DV-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI3451DV-T1-GE3-DG

Description:

MOSFET P-CH 20V 2.8A 6TSOP
Detailed Description:
P-Channel 20 V 2.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount 6-TSOP

Inventory:

12954253
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SI3451DV-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
115mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.1 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.25W (Ta), 2.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3451

Additional Information

Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
SI3443CDV-T1-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
3901
DiGi PART NUMBER
SI3443CDV-T1-GE3-DG
UNIT PRICE
0.14
SUBSTITUTE TYPE
Direct
DIGI Certification
Related Products
taiwan-semiconductor

TSG65N190CR RVG

650V, 11A, PDFN56, E-MODE GAN TR

alpha-and-omega-semiconductor

AO3452

MOSFET N-CH 30V 4A SOT23-3

vishay-siliconix

IRLZ24PBF-BE3

MOSFET N-CH 60V 17A TO220AB

genesic-semiconductor

G2R1000MT17J

SIC MOSFET N-CH 3A TO263-7