IRFSL11N50APBF
Manufacturer Product Number:

IRFSL11N50APBF

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

IRFSL11N50APBF-DG

Description:

MOSFET N-CH 500V 11A TO262-3
Detailed Description:
N-Channel 500 V 11A (Tc) 190W (Tc) Through Hole TO-262-3

Inventory:

12961241
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IRFSL11N50APBF Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1426 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFSL11

Additional Information

Other Names
*IRFSL11N50APBF
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
vishay-siliconix

SIRA00DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

vishay-siliconix

SIA485DJ-T1-GE3

MOSFET P-CH 150V 1.6A PPAK SC70

vishay-siliconix

SUD25N15-52-E3

MOSFET N-CH 150V 25A TO252

vishay-siliconix

SI7440DP-T1-E3

MOSFET N-CH 30V 12A PPAK SO-8