Manufacturer Product Number:
IRFPE30
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
IRFPE30-DG
Description:
MOSFET N-CH 800V 4.1A TO247-3
Detailed Description:
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-247AC
Inventory:
12914785
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IRFPE30 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
IRFPE30
Additional Information
Other Names
*IRFPE30
Standard Package
500
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRFPE30PBF
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
383
DiGi PART NUMBER
IRFPE30PBF-DG
UNIT PRICE
2.37
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
Related Products
SI8405DB-T1-E3
MOSFET P-CH 12V 3.6A 4MICROFOOT
IXTM11N80
MOSFET N-CH 800V 11A TO204AA
IXTH34N65X2
MOSFET N-CH 650V 34A TO247
