IRFIB7N50APBF
Manufacturer Product Number:

IRFIB7N50APBF

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

IRFIB7N50APBF-DG

Description:

MOSFET N-CH 500V 6.6A TO220-3
Detailed Description:
N-Channel 500 V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3

Inventory:

813 Pcs New Original In Stock
12953893
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IRFIB7N50APBF Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1423 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFIB7

Datasheet & Documents

Datasheets

Additional Information

Other Names
*IRFIB7N50APBF
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
diodes

ZVN2106ASTOA

MOSFET N-CH 60V 450MA E-LINE

vishay-siliconix

SQJ850EP-T1_GE3

MOSFET N-CH 60V 24A PPAK SO-8

central-semiconductor

CP406-CWDM3011N-CT

MOSFET N-CH 11A 30V BARE DIE

vishay-siliconix

SIR870BDP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK