Manufacturer Product Number:
IRFD123PBF
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
IRFD123PBF-DG
Description:
MOSFET N-CH 100V 1.3A 4DIP
Detailed Description:
N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Inventory:
6628 Pcs New Original In Stock
12905629
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IRFD123PBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD123
Datasheet & Documents
Datasheets
Additional Information
Other Names
*IRFD123PBF
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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